Abstract
The present work introduces the formation of a highly organized one dimensional Ga2O3 nanoporous architecture by anodization of Ga metal at -10 degrees C in a mixture of phosphoric acid and ethylene glycol. In addition to pure Ga2O3, we perform in situ Zn doping by alloying Ga with 1 at.% Zn. After zinc doping, the Ga2O3 nanoporous layers demonstrate promising properties for photo-induced hydrogen generation from water. (C) 2013 Elsevier B.V. All rights reserved.