Semi-insulation of undoped GaAs epitaxial layers by wafer annealing

Journal article

Peer reviewed

T Imaizumi, H Okazaki and O Oda

Applied physics letters, Vol.63(10), pp.1390-1392

06/09/1993

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Conductivity phenomena in semiconductors and insulators

Electronic transport in condensed matter

Exact sciences and technology

Low-field transport and mobility; piezoresistance

Physics

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Title: Semi-insulation of undoped GaAs epitaxial layers by wafer annealing
Creators - without role: T Imaizumi - Nikko Kyodo Co., Ltd, Electronic Materials & Components Research Laboratories, Toda, Saitama 335, Japan
H Okazaki - Nikko Kyodo Co., Ltd, Electronic Materials & Components Research Laboratories, Toda, Saitama 335, Japan
O Oda - Nikko Kyodo Co., Ltd, Electronic Materials & Components Research Laboratories, Toda, Saitama 335, Japan
Publication Details: Applied physics letters, Vol.63(10), pp.1390-1392
Publisher: American Institute of Physics
Identifiers: 9921603908331
Academic Unit: King Saud Bin Abdulaziz University for Health Sciences
Language: English
Resource Type: Journal article