Abstract
The effect of illumination intensity on the solar cell parameters has been investigated based on the one-diode model. In this study we made measurements on (i) a typical monocrystalline silicon homostructure cell (blue c-Si SAT solar cell), which is considered as a reference ideal cell (high quality), and (ii) a low quality front wall Cu2S-CdS heterostructure. The dependence of the cell parameters on illumination intensity for the range 20 - 100 mW/cm(2) at T = 300 K has been investigated. It was found that the V-max voltage at the maximum power point is located in the neighbourhood of V-oc for the ideal silicon SAT solar cell, while for Cu2S-CdS cell, it was in the neighbourhood of f x V-oc, where f is the golden number conjugate. The maximum electrical output power delivered by the two cell types follows a linear variation with the illumination intensity level E. In the case of the ideal SAT solar cell, series resistance decayed exponentially when illumination intensities E increases while in the case of the Cu2S-CdS solar cell, this behaviour was observed for the shunt resistance.