Abstract
Si3N4/SiC interface structure in SiC-nanocrystal-embedded alpha-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded alpha-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N-2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., [1 (1) over bar0](SiC)//[0001](Si3)N-4 and nearly (111)(SiC)//(10 (1) over bar0)(Si3)N-4 with low-angle discrepancy of either 3degrees or 5degrees. The origin of the low-angle discrepancies was explained in terms of a reciprocal lattice theory for heteroepitaxial interfaces. (C) 2002 American Institute of Physics.