Abstract
Photovoltaic devices based on single wall carbon nanotubes (SWCNTs) and n-silicon multiple heterojunctions have been fabricated by a SWCNT film transferring process. We report on the ability of the carbon nanotubes to extend the Si spectral range towards the near ultraviolet (UV) and the near infrared regions. Semiconducting and about metallic SWCNT networks have been studied as a function of the film sheet resistance, R-sh. Optical absorbance and Raman spectroscopy have been used to assign nanotube chirality and electronic character. This gave us hints of evidence of the participation of the metal nanotubes in the photocurrent generation. Moreover, we provide evidence that the external quantum efficiency spectral range can be modulated as a function of the SWCNT network sheet resistance in a hybrid SWCNT/Si solar cell. This result will be very useful to further design/optimize devices with improved performance in spectral regions generally not covered by conventional Si p-n devices.