Abstract
In this paper, the authors report a study of the simulated dynamical x-ray diffraction from GaAs/In0.3Ga0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates both with (metamorphic) and without (pseudomorphic) dislocations. The analysis of dynamical x-ray diffraction for 004, 115, 026, and 117 reflection profiles was conducted for the case of Cu k alpha(1) radiation. The authors show that the threading dislocation density may be estimated from nondestructive x-ray rocking curve measurements, using the rocking curve peak intensity ratios or widths for superlattice diffraction peaks. Despite the complexity of these multilayered device structures and the resulting x-ray diffraction profiles, analysis of the 004 x-ray diffraction profile allows characterization of the pseudomorphic-metamorphic transition in them and is of considerable practical importance for device realization. (C) 2017 American Vacuum Society.