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Simulation Study of a 3-D Device Integrating FinFET and UTBFET
Journal article   Peer reviewed

Simulation Study of a 3-D Device Integrating FinFET and UTBFET

Hossain M. Fahad, Chenming Hu and Muhammad M. Hussain
IEEE transactions on electron devices, Vol.62(1), pp.83-87
01/01/2015

Abstract

Engineering Engineering, Electrical & Electronic Physical Sciences Physics Physics, Applied Science & Technology Technology
By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.

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