Abstract
Linear, nonlinear and total optical absorption as functions of the incident photon energy for pressure P = 2 Kbar.
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•We study the effects of the hydrostatic pressure on the optical absorption coefficients.•The findings show that the optical absorption can be tune by doping concentration.•The absorption α12 presents a red shift at first and then a blue shift by increasing VC.
This work theoretically investigates the impact of structural parameters on energy levels and optical absorption coefficients in an Si-delta doped GaAs field-effect transistor δ-FET. The structural parameters include the doping concentration of the planar silicon layer, the applied hydrostatic pressure P, and the contact potential VC. The energy levels and their corresponding wavefunctions were calculated using the effective mass approximation by solving the Schrödinger equation while taking into account the Hartree and exchange potentials. At higher doping concentrations and applied hydrostatic pressures, the optical absorption coefficients shifted towards higher energies (blue shift). However, when the applied voltage VC increased, we noted either red-shift or a blue-shift. This findings is a very important result of this work. Our results may be useful for designing and fabricating optoelectronic devices that, depend on hydrostatic pressure and contact voltage.