Abstract
We report on a method for controlling the polarity of gallium nitride (GaN) using an E-beam evaporated aluminum (Al) layer on a sapphire substrate. A high-temperature nitridation process was designed to enable the amorphous Al layer to serve as a nucleation layer for single-crystal Ga-polar GaN growth. The Al layer also acts as a mask that prevents N-polar GaN growth. As a result, Ga-polar and N-polar GaN can be grown on the Al layer and sapphire surface, respectively. This method is not only advantageous for the selective polarity control but also to simplify the fabrication process of lateral polarity structures.