Abstract
Growth of TiO2 nanotubes on thin Ti film deposited on Si wafers with site-specific and patterned growth using a photolithography technique is demonstrated for the first time. Ti films were deposited via e-beam evaporation to a thickness of 350-1000 nm. The use of a fluorinated organic electrolyte at room temperature produced the growth of nanotubes with varying applied voltages of 10-60 V (DC) which remained stable after annealing at 500 degrees C. It was found that variation of the thickness of the deposited Ti film could be used to control the length of the nanotubes regardless of longer anodization time/voltage. Growth of the nanotubes on a SiO2 barrier layer over a Si wafer, along with site-specific and patterned growth, enables potential application of TiO2 nanotubes in NEMS/MEMS-type devices.