Sign in
Back
Six-Fold Mobility Improvement of Indium-Zinc Oxide Thin-Film Transistors Using a Simple Water Treatment
Journal article   Peer reviewed

Six-Fold Mobility Improvement of Indium-Zinc Oxide Thin-Film Transistors Using a Simple Water Treatment

Pradipta K. Nayak, Jesus A. Caraveo-Frescas, Zhenwei Wang, Mohamed N. Hedhili and Husam N. Alshareef
Advanced electronic materials, Vol.1(6), pp.1500014-n/a
01/06/2015
DOI: https://doi.org/10.1002/aelm.201500014

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
A simple deionized water treatment is found to increase the mobility of indium zinc oxide thin-film transistor six times, without compromising the other transistor parameters. Field-effect mobility of ca. 51 cm(2) V-1 s(-1) is obtained for solution derived oxide thin film transistors at process temperatures below 300 degrees C.

Metrics

1 Record Views

Details