Abstract
A ternary organic semiconducting blend composed of a small-molecule, a conjugated polymer, and a mole cular p-dopant is developed and used in solution-processed organic transistors with hole mobility exceeding 13 cm(2) V-1 s(-1) (see the Figure). It is shown that key to this development is the incorporation of the p-dopant and the formation of a vertically phase-separated film microstructure.