Abstract
In this paper we propose that Sn2Sb2S5 is one of the main candidates of thin film absorbers materials. Sulfosalt Sn2Sb2S5 thin films have been deposited on glass substrates by vacuum evaporation method. The pressure during evaporation was maintained at 10(-5) Torr. The films were annealed in air atmosphere in the temperatures range 100-250 degrees C. Two optical direct transitions were found. Absorption coefficients higher than 10(4) cm(-1) were found. The X-ray diffraction analysis indicates that before and after annealing only the Sn2Sb2S5 phase is present. Sn2Sb2S5 thin films exhibit N-type conductivity after annealing. We present a model that helps to explain the evolution of photovoltaic effect.