Abstract
In this work, SnS films were obtained by the SILAR method at 25 and 50 cycles. These films were used by the first time in the photocatalysis process to produce H-2 under simulated sunlight. Additionally, AuPd was deposited by physical vapor deposition method on SnS films, which served as co-catalyst to increase the photocatalytic activity of the films. Characterization was done by X-ray diffraction (XRD), where it was found that SnS crystallizes in an orthorhombic crystal structure. By scanning electron microscopy (SEM) it was appreciated a homogeneous distribution in SnS 25 cycles film, while SnS 50 cycles film showed a greater density of particles deposited on the substrate. Band gap energy (UV-vis) for SnS 25 cycles and SnS 50 cycles films were close to 2.0 and 1.25 eV, respectively. Photoluminescence (PL) analysis showed that the emission spectra intensity of films decreases due to the presence of co-catalyst because of the lower electron-hole pair recombination. Both, SnS 25 cycles and SnS 50 cycles films, were able to produce H2 under solar light simulation (91 and 32 mu mol/m(2) after 3-h irradiation). This activity was increased when AuPd was deposited as co-catalyst on SnS films; around 8 and 6 times, for SnS-AuPd 25 cycles and SnS-AuPd 50 cycles films, respectively (728 and 175 mu mol/m(2) after 3-h irradiation). Therefore, it can be assumed that AuPd co-catalyst favors the transfer charge and decrease the electron-hole pair recombination to promote and enhance the photocatalytic H-2 production.