Abstract
Deposition of Ni as contact on 4H-SiC has been investigated. Ni /4H-SiC samples were annealed at temperatures of 600, 800 and 950 deg C for 30 min and were non-destructively characterized by soft X-ray emission spectroscopy (SXES) using synchrotron radiation as excitation. Si L sub 2,3 SXE showed the formation of Ni sub 2 Si for all annealing temperatures. The C K SXE indicated the formation of graphite and graphitic carbons at annealing temperatures of 950 deg C and below 800 deg C, respectively.