Abstract
Polycrystalline thin films of cadmium stannate (Cd2SnO4) (CTO) were coated on corning glass substrates by sol-gel method. The films were fired at different temperatures and annealed in inert ambient (N2) at 680°C. The structural, optical, and electrical properties of dip-coated cadmium-tin-oxide (CTO) thin films are discussed. CTO layers with a Hall mobility of 30 cm2/Vs and a carrier density of 1.4 × 1021 cm−3 resulting in a resistivity of 5 × 10−4 Ω cm have been deposited. Dip-coating conditions must be carefully monitored to produce consistent films. The high electronic conductivity is due to two effective mechanisms of n-type doping: (i) stoichiometric deviation and (ii) self-doping.