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Solution for the critical thickness models of dislocation generation in epitaxial thin films using the Lambert W function
Journal article   Peer reviewed

Solution for the critical thickness models of dislocation generation in epitaxial thin films using the Lambert W function

Chokri Hadj Belgacem and Mustapha Fnaiech
Journal of materials science, Vol.46(6), pp.1913-1915
01/03/2011
DOI: https://doi.org/10.1007/s10853-010-5026-y

Abstract

Materials Science Materials Science, Multidisciplinary Science & Technology Technology
An exact analytical solution for the equilibrium critical thickness of misfit dislocation generation in epitaxial thins films is presented. The new expression is based on the use of the Lambert W function which eliminates the need of complex iterative computation. The comparison of proposed analytical solution versus misfit strain with the equilibrium critical thickness based on numerical solution proves its high accuracy.

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