Abstract
AgInS
2 thin films have been prepared on glass substrates by the spray pyrolysis process using an aqueous solution which contains silver acetate (AgCH
3CO
2), thiourea (SC(NH
2)
2) and indium chloride (InCl
3) as precursors. The depositions were carried out in the range of the substrate temperature from 260 to 420
°C. The value of the concentration ratio in the spray solution of indium and silver elements
x=[Ag
+]/[In
3+] was varied from 1 to 1.5 with [In
3+]=10
−2
M and [S
2−]/[In
3+] was taken constant, equal to 4. The structural study shows that AgInS
2 thin film, prepared at 420
°C using optimal concentration ratio
x
=
1.3
crystallizes in the chalcopyrite phase with a strong (1
1
2) X-ray diffraction line. Moreover, microprobe analysis (EPMA) shows that a nearly stoichiometric composition is obtained for these experimental conditions. Indeed, the atomic percentage of elements were. 24.5, 25.0, 49.5 for Ag, In and S, respectively. On the other hand from transmission and reflectance spectra, the obtained band gap energy is 1.83
eV for such film.