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Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size
Journal article   Peer reviewed

Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size

Journal of superconductivity and novel magnetism, Vol.33(7), pp.2143-2148
01/07/2020

Abstract

Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology

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