Sign in
Back
Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact
Journal article   Peer reviewed

Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

Woojin Park, Jung-Wook Min, Sohail Faizan Shaikh and Muhammad Mustafa Hussain
Physica status solidi. A, Applications and materials science, Vol.214(12), p.n/a
01/12/2017
DOI: https://doi.org/10.1002/pssa.201700534

Abstract

Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Technology
Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (V-TH) shift and reduced series resistance (R-SD) were simultaneously achieved.

Metrics

1 Record Views

Details