Stress and density of defects in Si-doped GaN

Journal article

Peer reviewed

Z. Chine, A. Rebey, H. Touati, E. Goovaerts, M. Oueslati, B. El Jani and S. Laugt

Physica status solidi. A, Applications and materials science, Vol.203(8), pp.1954-1961

06/2006

Abstract

61.10.Nz

61.72.Dd

61.72.Lk

61.72.Vv

78.30.Fs

78.55.Cr

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Title: Stress and density of defects in Si-doped GaN
Creators - without role: Z. Chine - University of Monastir
A. Rebey - University of Monastir
H. Touati - University of Monastir
E. Goovaerts - University of Antwerp
M. Oueslati - Tunis University
B. El Jani - Unité de Recherche sur l'Hétéroépitaxie et Applications, Faculté des Sciences, Monastir 5000, Tunisia
S. Laugt - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
Publication Details: Physica status solidi. A, Applications and materials science, Vol.203(8), pp.1954-1961
Publisher: WILEY-VCH Verlag
Number of pages: 8
Identifiers: 9928395908331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article