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Stress-dependence tight binding study of tellurium-based II–VI semiconductors
Journal article   Peer reviewed

Stress-dependence tight binding study of tellurium-based II–VI semiconductors

A.E. Merad, M.B. Kanoun, J. Cibert, H. Aourag and G. Merad
Physics letters. A, Vol.315(1), pp.143-149
18/08/2003

Abstract

CdTe Deformation potential constants Electronic structure Tight binding method ZnTe

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