Abstract
Thallium indium di-selenium (TlInSe2) is one of the most promising chalcogenide materials having a layered crystalline structure that has been nominated in different fields of industry. In our work, a film of TlInSe2 has been fabricated using a coating unit. The morphology properties of TlInSe2 have been investigated by atomic force microscopy (AFM). The Raman spectroscopy proved that there are identical spectra between the powder and the film, and they agreed with what was previously reported for the TlInSe2 crystal. By AFM, it was found that the grain sizes and the roughness of TlInSe2 film are 100 and 6.49 nm, respectively. The real (epsilon(1)) and imaginary (epsilon(2)) parts of complex dielectric permittivity and AC conductivity were measured in the frequency range of 42 Hz-5 MHz with a variation of temperature in the range from 303 to 443 K. The estimated values of Delta E-M and tau(o) were found to be 0.321 eV and 2.28 x 10(-10) s, respectively. The electrical conductivity of TlInSe2 thin film increased by about 40% as the temperature increased from 303 to 443 K. On the contrary, the AC activation energy has decreased rapidly by about 54%.