Abstract
X-ray diffraction and scanning electron microscopy show that the crystalline state of indium sulphide thin films, elaborated by chemical bath deposition technique on various substrates, is strongly affected by deposition parameters (deposition time
t
D, pH solution and thioacetamide concentration), as well as by annealing treatment.
We show that β-In
2S
3 thin films grown on glass substrate during
t
D=60 min, and annealed under nitrogen at 400 °C during 1 h are well crystallized according to the cubic structure with the preferential orientation (610). They have a good homogenity and crystallinity.