Abstract
In this paper, electrochemical anodization was used to fabricate porous layers onn-type GaAs substrates with different orientations, i.e., (511)A, (100) and (111)B, under the same experimental conditions. Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) were used to characterize the formed porous layers, with respect to the substrate orientation. Results obtained from SEM and AFM data are evidence of the formation of GaAs nanocrystallites and reveal that pores grow along definite crystallographic directions. XRD analysis confirm the single crystalline structure of porous layers and a relative peak shift as compared to GaAs, indicating a change in the lattice constant due to strain effects. The photoluminescence spectra of the porous layers showed red PL bands attributed to quantum confinement effects in GaAs nanocrystallites. The investigated current-voltage (I-V) in the forward bias region demonstrates that the transport mechanism in the Au/porous-GaAs/GaAs structures was governed by space-charge-limited current (SCLC). In fact, non-saturating behavior was observed in the reverse biasI-Vcharacteristics due to both the effective barrier height dependence on the electric field and the thermionic field emission.