Abstract
In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m(-1)), optically semi-transparent silicon fabric (1.5 cm x 3 cm x 25 mu m). The electrical characteristics show 3.7 nm effective oxide thickness, -0.2V flat band voltage, and no hysteresis from the fabricated MOSCAPs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791693]