Abstract
Zinc telluride thin films of various thicknesses are deposited by vacuum evaporation onto glass substrates at room temperature. The X-ray diffraction technique is used to determine the crystalline structure and grain size of the films, respectively. The structure was found to be cubic with preferential orientation along a (1
1
1) plane and crystallite size of about 50–80
nm. The degree of preferred orientation and crystallite size are increased as the film thickness increases. The current density–voltage (
J–V) characteristics showed ohmic conduction in the lower voltage range and space-charge-limited conductivity in the higher voltage range. Capacitance measurements indicated that the films have a relative permittivity, ε
r, of approximately 8.19. Further evidence for this conduction process was provided by linear dependence of
V
t on
d
2. Analysis of the results yielded hole concentration
P
0=(4.2–8.4)×10
23
m
−3
, which is correlated with the structural properties.