Abstract
X-ray diffraction patterns of NiPc in powder form show that it has a beta-form with monoclinic structure. The thermal evaporation of NiPc led to alpha-polycrystalline films orientated preferentially to the (001) plane with an amorphous background. After annealing at 573K for 2 h, a mixture of alpha- and beta-phases was formed, while the conversion into beta- NiPc is completed at 623 K. The dark electrical resistivity has been measured on NiPc films in the temperature range 298-423K. Two activation energies Delta E-1 = 0.12 eV and Delta E-2 = 0.76 eV were obtained. The thermal activation energy Delta E-1 is associated with impurity conduction and Delta E2 is associated with intrinsic conduction. Thermoelectric power measurement proved that NiPc films are p-type. The thermoelectric power curves also exhibit two different regions corresponding to extrinsic and intrinsic conductions. Room temperature J-V measurements show a linear ohmic dependence at low voltages, followed by SCLC at higher voltage levels, dominated by an exponential distribution of traps with total trap concentration of 2.79 x 10(22) m(-3).