Abstract
CdS semiconductor nanocrystals have been prepared in novel glass matrix. DTA curve was analyzed to evaluate the glass transition temperature and hence determine the heat treatment temperatures of samples. The existence of the CdS semiconductor as nanocrystallites was confirmed by XRD, TEM and FTIR spectra analyses. The growth of CdS semiconductor nanocrystals in glass matrix was investigated through the analysis of optical absorption spectroscopy. The spectra indicate that the absorption edges shift toward longer wavelengths after increasing the heat-treated temperatures and times. The blueshifts of the absorption edges were used to calculate the CdS particle sizes by effective mass approximation. The present glass includes CdS nanocrystals with an initial size of similar to 1.41 nm on cooling from the melt at similar to 1100 degrees C to room temperature. The activation energy for the early stages of diffusive growth of CdS nanocrystals in present glass is obtained by Arrhenius plots to be 49.37 kJ/mol.