Abstract
Structural, magnetic, electrical and dielectric properties of Ni0.6Mg0.4Fe2O4 ferromagnetic ferrite synthetized using sol gel method have been studied. XRD measurements confirm that the compound crystallizes in the cubic structure with Fd3¯mspace group. Magnetic properties of our sample are analyzed by the hysteresis loop, which shows a ferromagnetic character at room temperature. Electrical characterization is performed by measuring the conductance as a function of frequency ranging from 10 Hz to 5 MHz and under different temperatures 295–440 K. The conductance response is investigated in the basis of Jonscher universal power law: G(ω) = GDC + Aωn, where ω is the frequency, and n is the exponent. DC electrical region analysis indicates a semiconductor behavior in which the conductivity is governed by the small polaron hopping process. The determined activation energy is about 0.242 eV. The conduction mechanism is affected by the grain and grain boundaries contribution, which is confirmed by the modulus analysis. Finally, the dielectric permittivity and dielectric loss are measured. We found that the Ni0.6Mg0.4Fe2O4 ferrites have a significate permittivity at room temperature and a very low dielectric loss. These results offer the possibility of nanoelectronics application using this high performance ferromagnetic ferrite.