Structural, optical and thermal properties of V-doped GaN thin films grown by MOCVD technique

M. Souissi; T. Ghrib; A. Al-Otaibi; I. A. Al-Nuaim; M. Bouzidi

doi:10.1016/j.tca.2019.178428

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Structural, optical and thermal properties of V-doped GaN thin films grown by MOCVD technique

Journal article

Peer reviewed

Structural, optical and thermal properties of V-doped GaN thin films grown by MOCVD technique

M. Souissi, T. Ghrib, A. Al-Otaibi, I. A. Al-Nuaim and M. Bouzidi

Thermochimica acta, Vol.682, p.178428

01/12/2019

DOI: https://doi.org/10.1016/j.tca.2019.178428

Abstract

Chemistry

Chemistry, Analytical

Chemistry, Physical

Physical Sciences

Science & Technology

Thermodynamics

V-doped GaN epitaxial thin films were grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrate. Structure, surface morphology, gap energy, thermal conductivity, and thermal diffusivity are studied. The results show that the gap energy does not change with this V-doping concentration but its thermal conductivity decreases to a factor of about 3.5 from 128 to 36 W/mK. This behavior may be associated with the structural changes that are taking place with the addition of V content, showing that the material presents a good performance asked in certain applications.

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Title: Structural, optical and thermal properties of V-doped GaN thin films grown by MOCVD technique
Creators - without role: M. Souissi - University of Sousse
T. Ghrib - Imam Abdulrahman Bin Faisal University
A. Al-Otaibi - Imam Abdulrahman Bin Faisal University
I. A. Al-Nuaim - Imam Abdulrahman Bin Faisal University
M. Bouzidi - University of Monastir
Publication Details: Thermochimica acta, Vol.682, p.178428
Publisher: Elsevier
Number of pages: 7
Identifiers: 9915444708331
Academic Unit: Imam Abdulrahman Bin Faisal University; University Ha'il
Language: English
Resource Type: Journal article