Abstract
Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 x 10 (-aEuro parts per thousand 5) torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV-VIS-NIR, photoluminescence spectroscopy and scanning electron microscopy (SEM). X-ray diffraction results showed that the films were polycrystalline with cubic structure and had preferred growth of grains along the (111) crystallographic direction. Scanning electron micrographs showed that the growth of crystallites of comparable size on both the substrates. At the room temperature, photoluminescence spectra of the films on both the substrates showed sharp peaks with a maximum at 805 nm. This band showed significant narrowing suggesting that it originates from the transitions involving grain boundary defects. The refractive index of CdTe thin films was calculated using interference pattern of transmission spectra. The optical band gap of thin films was found to allow direct transition with energy gap of 1 center dot 47-1 center dot 50 eV. a.c. conductivity of CdTe thin films was found to increase with the increase in frequency whereas dielectric constant was observed to decrease with the increase in frequency.