Abstract
•The tetragonal NaZnP has brittle nature.•The Cu2Sb-type phase of NaZnP is a direct band gap semiconductor.•The TB-mBJ approximation yields larger fundamental band gaps.•The bonding in Cu2Sb–NaZnP is of covalent-ionic character.•High reflectivity (60%) and refractive index (3.9) are observed for the compound.
Ab-initio full potential augmented plane wave plus local orbitals method has been used to investigate the structural phase transition, mechanical and optoelectronic properties of the Nowotny–Juza filled-tetrahedral compound NaZnP. The exchange-correlation potential was treated within the generalized gradient approximation of Perdew–Burke and Ernzerhof (GGA-PBE) and the modified Becke–Johnson potential (TB-mBJ) to improve the accuracy of the electronic band structure. Total-energy and geometry optimizations have been carried out for all structural phases of NaZnP. The following sequence of pressure-driven structural transitions has been found: Cu2Sb-type→β-phase→α-phase. The single-crystal elastic constants of NaZnP in the Cu2Sb-type structure have been calculated using total-energy versus strain method and their corresponding elastic moduli of polycrystalline aggregate, including Young’s modulus, shear modulus and Poisson’s ratio, have been derived. From the elastic parameters, it is inferred that this compound is brittle in nature. The elastic anisotropy was studied in detail using three different indexes; especially the 3D direction dependence of the Young’s modulus was visually described. Furthermore, calculated electronic band structure shows that NaZnP in the Cu2Sb-type phase has a direct energy band gap (Γ–Γ). The TB-mBJ approximation yields larger fundamental band gaps compared to those of PBE-GGA. The examined charge density distributions for the Cu2Sb-type structure show a covalent character for Zn–P bond and ionic nature for Na–P bond. Additionally, real and imaginary parts of the dielectric function, reflectivity and energy loss function spectra have been calculated for radiation up to 30.0eV with an incident radiation polarized parallel to both [100] and [001] crystalline directions.