Abstract
Ni2S2-x thin films with x = 0, 0.5, and 1 were prepared by chemical bath deposition technique. Amorphous structure was discovered by XRD for x = 1, while alpha-Ni7S6 and NiS phases were discovered for x = 0, and x = 0.5 respectively. SEM graphs of the studied films have confirmed the XRD results. Optical band gap values increase from 0.845 to 0.912 eV, with increase of the composition x from 0 to 1. Activation energy values increase in the range from x = 0 to x = 0.5 and does not change for x = 1.