Abstract
A special new design from melt based on the Bridgman technique has been applied to prepare Tl2Te3 single crystals. The grown crystals were characterized by XRD, SEM, EDAX. The electrical conductivity, Hall effect and thermoelectric power have been performed over the temperature ranges from 93 K to 448 K and 129 K to 468 K respectively. Many physical constant (such as the energy gap, the depth of the impurity level, the Hall coefficient, the conductivity type, the diffusion length, the diffusion coefficient, the scattering mechanism of the charge carriers and their concentrations, the mobility, effective mass, and the lifetime of the majority and minority carriers) have been estimated. The results show that the prepared Tl2Te3 single crystals can be used in the fabrication of electronic devices.