Abstract
Indium doped GaFeO3 (Ga1-xInxFeO3, 0 < x < 0.25) samples were synthesized by the ceramic's procedure. The correlation between lattice parameter, different ions occupancies between different sites and the octahedral and tetrahedral distortion of indium doped GaFeO3 were studied in detail. Zero field cooled (ZFC) and field cooled (FC) magnetization measurements revealed that all samples exhibited a ferrimagnetic to paramagnetic phase transition below room temperature. Applying the law of approach to saturation, the 10% indium doped GaFeO3 sample revealed the highest saturation magnetization than the other samples. The dielectric constant (epsilon'), dielectric loss (tan delta), ac-conductivity, complex impedance parts and the hopping probability of electrons variation with temperature and frequency were studied in detail at different values of indium doping in GaFeO3 sample. The influence of doping on the activation energy of the conduction process was also investigated. Impedance Nyquist plot was used to differentiate between the grain and grain boundary contribution in indium doped GaFeO3 samples.