Abstract
Al-doped ZnO thin films of thickness congruent to 60 nm were prepared by RF reactive magnetron sputtering. All optimum conditions were fixed through the depositions expect the power of the DC for Al-dopants. The structure of the as-grown samples measured by XRD showed that the films have a hexagonal structure with a space group p63m. The SEM micrographs illustrated uniform and/or non-uniform spherical shape for pure ZnO and Al-doped ZnO, while the sizes ranged from 18 to 35 nm. The linear refractive indices (n) were calculated on the basis of Fresnel's equations. The refractive index pounced peaks changed with changing the Al-dopnats. Based on the spectroscopic data, the linear and non-linear parameters such as the linear optical susceptibility chi((1)), non-linear refractive index (n(2)) or non-linear optical susceptibility chi((3)) were calculated and analyzed from spectroscopic analysis. The Al-doped ZnO is a good candidate for new generation of electronic and optoelectronic devices. (C) 2016 Elsevier GmbH. All rights reserved.