Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry

Journal article

Peer reviewed

A Rebey, M. M Habchi, Z Benzarti and B EL JANI

Microelectronics journal, Vol.35(2), pp.179-184

01/02/2004

Abstract

Applied sciences

Electronics

Exact sciences and technology

Interfaces

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry
Creators - without role: A Rebey - University of Monastir
M. M Habchi - University of Monastir
Z Benzarti - University of Monastir
B EL JANI - University of Monastir
Publication Details: Microelectronics journal, Vol.35(2), pp.179-184
Publisher: Elsevier Science
Identifiers: 9929023108331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article