Abstract
In this research, we experimentally and numerically demonstrate the beneficial effect of superficial porous silicon layer in the optoelectronics properties of multi-crystalline silicon. From Laser Beam Induced Current simulations, we found that the chemical composition of the porous silicon acts as a good surface passivation and a potential candidate for electronic quality and optoelectronics properties improvement. This means that the current generated by the treated silicon is 5 times higher than the reference substrate. As a result, the minority carrier diffusion length has increased by 66%. In addition to its passivation properties, the reflectance was significantly reduced to about 3% after porous silicon treatment, yielded to an efficiency improvement of 3.2% higher than the reference. The passivation and antireflection properties of superficial porous silicon layer make it a highly promising material for improving the efficiency and performance of solar cells.