Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF

Journal article

Peer reviewed

H. Maanane, M. Masmoudi, J. Marcon, M.A. Belaid, K. Mourgues, C. Tolant, K. Ketata and Ph Eudeline

Microelectronics and reliability, Vol.46(5-6), pp.994-1000

01/05/2006

Metrics

1 Record Views

Title: Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF
Creators - without role: H. Maanane - Université de Rouen Normandie
M. Masmoudi - Université de Rouen Normandie
J. Marcon - Université de Rouen Normandie
M.A. Belaid - Université de Rouen Normandie
K. Mourgues - Université de Rouen Normandie
C. Tolant
K. Ketata - Université de Rouen Normandie
Ph Eudeline
Publication Details: Microelectronics and reliability, Vol.46(5-6), pp.994-1000
Identifiers: 9930890708331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Journal article