Abstract
The present study has used the thermoluminescence technique to get the basic data for trapping physical parameters of prepared semiconducting gallium telluride (Ga2Te3) compound. In this work, Ga2Te3 single crystal structure was synthesized using modified Bridgman method. The dependence of glow intensity on the excitation dose has been investigated. In addition, deconvolution of single glow peak was performed. GlowFit computer program has been used for the deconvolution of complex thermoluminescence glow-curves by resolving strongly overlapping peaks depending on their first-order kinetics and general-order kinetic. The thermoluminescence glow peaks of irradiated Ga2Te3 at doses of 0.2, 0.25, 0.5, 0.60, and 0.65 Gy using gamma rays were individually determined in the temperature region between room temperature and 300 degrees C. The results revealed that all obtained glow curves demonstrated a trademark crest at around 171.5 degrees C. The top peak heights increased with the increase of the irradiation dose. In addition, the results revealed that the thermoluminescence responses increased as the irradiation dose increased until 0.5 Gy and then decreased when the irradiation doses were greater than 0.5 Gy. Analytical deconvolution for all glow curves at irradiation doses indicated that the glow curve could be best described as a superposition of six peaks, which can be described by first-order kinetics. In addition, the activation energies and frequency factors of glow curve at irradiation dose of 0.5 Gy were calculated.