Abstract
Electron beam evaporated Sn-doped In2O3 films have been prepared from the starting material with composition of (1 - x) In2O3 - -x SnO2, where n = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material, In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6), There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In = 0.06 - -0.09. These results compare well with those reported in the literature for Sn-doped In2O3 films, prepared by pyrolitic (spray) method.