Abstract
A 400 keV Ar-40(+) ion beam was utilized to induce mixing between two thin layers of Ag and Ge. Rutherford Backscattering Spectrometry and Electrical Resistivity Measurements were employed as probes to investigate the kinetics of ion mixing. The intermixed region was studied at several fluences up to 1.7x10(17) ions/cm(2) at a constant flux of 0.25 mu A/cm(2). The "RUMP" simulation computer code was used to assist in the evaluation of the experimental results from the spectra. The analysis of the Rutherford Backscattering Spectrometry spectra shows that increasing the Ar+ fluence enhances the Ag-Ge intermixing. To describe the mixing process, mixing rate parameters were calculated and compared with the theoretical models' predictions. Borgesen's local thermal spike model was found to accurately predict the diffusion in the Ag-Ge interface. An increase in the electrical resistivity of the film was detected during irradiation.