Study of ion beam induced mixing in Sn/Si system using electrical resistivity measurements

Journal article

Peer reviewed

A. J. A EL-HAIJA, K. A AL-SALEH, N. A Halim, J. M Khalifeh and N. S Saleh

Journal of radioanalytical and nuclear chemistry, Vol.120(2), pp.387-392

01/02/1988

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Condensed matter: structure, mechanical and thermal properties

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Ion radiation effects

Materials science

Metals, semimetals and alloys

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Other interactions of matter with particles and radiation

Physical radiation effects, radiation damage

Physics

Specific materials

Structure of solids and liquids; crystallography

1 Record Views

Title: Study of ion beam induced mixing in Sn/Si system using electrical resistivity measurements
Creators - without role: A. J. A EL-HAIJA - University of Jordan
K. A AL-SALEH - University of Jordan
N. A Halim - University of Jordan
J. M Khalifeh - University of Jordan
N. S Saleh - University of Jordan
Publication Details: Journal of radioanalytical and nuclear chemistry, Vol.120(2), pp.387-392
Publisher: Springer
Identifiers: 9952928908331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article