Abstract
CuInSe
2 polycrystalline films were grown on glass substrates by preparing stacked elemental layers (SELs) of Cu, In and Se followed by annealing at 200, 250, 300 and 400 °C for different times (from 15 to 240 min). Additional growth of the various phases was followed at different temperatures until a single phase CuInSe
2 film was formed. X-ray diffraction (XRD) was used in identifying the different phases formed. It was concluded that a single phase of CuInSe
2 film is obtained at a reaction temperature of 300 °C for a heating time ≥1 h.