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Study of silicon photomultiplier performance in external electric fields
Journal article   Peer reviewed

Study of silicon photomultiplier performance in external electric fields

X. L. Sun, T. Tolba, G. F. Cao, P. Lv, L. J. Wen, A. Odian, F. Vachon, A. Alamre, J. B. Albert, G. Anton, …
Journal of instrumentation, Vol.13(9), pp.T09006-T09006
17/09/2018

Abstract

Instruments & Instrumentation Science & Technology Technology
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

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