Abstract
The performances of various configurations of InGaN solar cells are compared using nextnano semiconductor simulation software. Here, we compare a flat base-graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN structure with InxGa1-xN contact layers, i.e., a homojunction. The doping in the graded structures is the result of polarization doping at each edge (10 nm from each side) due to the compositional grading, while the well structures and homojunctions are impurities doped at each edge (10 nm from each side) at levels equal to the polarization doping density in the graded structure with similar maximum indium concentration. The solar cells are characterized by their open-circuit voltage, V-oc, short circuit current, I-sc, solar efficiency, eta, and energy band diagram. The results indicate that an increase in I-sc and eta results from increasing both the fixed and maximum indium compositions, while the V-oc decreases. The maximum efficiency is obtained for the InGaN well with 60% In. (C)2022 by the U.S. Secretary of Commerce on behalf of the United States. All rights reserved.