Abstract
The alignment of quantum dots (QDs) has been a complicated exercise of combining lithography with deposition or growing QD superlattices. In this work, we demonstrate the aligned growth of epitaxial Si QDs on 1-dimensional (1-D) HfO
2 ridges. These ridges were created by the growth of HfO
2 thin film on single wall carbon nanotubes (SWCNT) parallel to the substrate surface. The reason for the QD alignment on the HfO
2 thin film is in the strain that is built at the top of the 1-D ridges, which favors the formation of Si seeds over the surrounding flat HfO
2 area. Periodic alignment of Si QDs on the 1-D HfO
2 ridge was observed. A study over the effects of different growth conditions, such as growth temperature, and growth time is presented. The size of the QDs is found to be directly related to the size of the ridge.