Abstract
In the present work, the effect of the oxygen partial pressure (OPP) has been studied on the electronic structure of the Ce0.95Fe0.05O2-delta thin film (TF) through Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The varying OPP, from 200 mTorr to 1 mTorr, was observed to vary the oxidation conditions during TF deposition. The oxygen valency was estimated to be reduced along with the generation of oxygen vacancies as determined via Raman analysis. The AFM analysis revealed the lowered values of the roughness parameters which indicated that reduction in OPP is associated with the smoothness of the film surface. The film surface was found to be reduced, as characterized by XPS investigation, as a result of the change in valency of Ce from +4 to +3 due to reduced OPP. The concentration of Ce3+ state was estimated to increase from 19.5% to 33% with reducing OPP. This evidently supports the formation of oxygen vacancies since the reduction of the valence state of Ce is known to be accompanied by the generation of oxygen vacancies. The O1 s spectra confirmed the oxygen non-stoichiometry as a function of OPP, whereas, Fe 2p suggested the mixed-valence state of Fe (Fe2+/Fe3+) in Ce0.95Fe0.05O2-delta (TF). To put in brief, the variation in OPP affects the chemical composition of the material by modifying its electronic structure via controlling the exchange interactions in the core structure of the compound.