Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree

Journal article

Peer reviewed

Houda Bouazizi, Noureddine Chaaben, Youssef El Gmili, Amor Bchetnia, Jean-Paul Salvestrini and B. El Jani

Journal of crystal growth, Vol.434, pp.72-76

15/01/2016

Abstract

Condensed Matter

Materials Science

Physics

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Title: Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree
Creators - without role: Houda Bouazizi - University of Monastir
Noureddine Chaaben - University of Monastir
Youssef El Gmili - Georgia Tech Lorraine
Amor Bchetnia - University of Monastir
Jean-Paul Salvestrini - CentraleSupélec
B. El Jani - University of Monastir
Publication Details: Journal of crystal growth, Vol.434, pp.72-76
Publisher: Elsevier
Identifiers: 9928338808331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article